october 2013 fqb30n06l n-channel qfet ? mosfet www.fairchildsemi.com 1 thermal characteristics symbol parameter unit r ? jc thermal resistanc e, junction to case, max. 1.90 o c/w r ? ja thermal resistance, junction to ambient (minimum pad of 2 oz copper), max. 62.5 thermal resistance, junction to ambient (* 1 in 2 pad of 2 oz copper), max. 40 absolute maximum ratings t c = 25c unless otherwise noted symbol parameter FQB30N06LTM unit v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 32 a - continuous (t c = 100c) 22.6 a i dm drain current - pulsed (note 1) 128 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 350 mj i ar avalanche current (note 1) 32 a e ar repetitive avalanche energy (note 1) 7.9 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t a = 25c) * 3.75 w power dissipation (t c = 25c) 79 w - derate above 25c 0.53 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c fqb30n06l n-channel qfet ? mosfet 60 v, 32 a, 35 m? description this n -channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features ? 32 a, 60 v, r ds(on) = 35 m? (max) @v gs = 10 v, i d = 16 a ? low gate charge (typ. 15 nc) ? low crss (typ. 50 pf) ? 100% avalanche tested ? 175 c maximum junction temperature rating FQB30N06LTM g s d d 2 -pak g s d ?2000 fairchild semiconductor corporation fqb30n06l rev. c1
www.fairchildsemi.com 2 fqb30n06l n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqb30n06l rev. c1 electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 400 h, i as = 32a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 32a, di/dt 300a/us, v dd bv dss, starting t j = 25c 4. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.06 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1.0 -- 2.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 16 a v gs = 5 v, i d =16 a -- -- 0.027 0.035 0.035 0.045 ? g fs forward transconductance v ds = 25 v, i d = 16 a -- 24 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 800 1040 pf c oss output capacitance -- 270 350 pf c rss reverse transfer capacitance -- 50 65 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 16 a, r g = 25 ? -- 15 40 ns t r turn-on rise time -- 210 430 ns t d(off) turn-off delay time -- 60 130 ns t f turn-off fall time -- 110 230 ns q g total gate charge v ds = 48 v, i d = 32 a, v gs = 5 v -- 15 20 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 8.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 32 a i sm maximum pulsed drain-source diode forward current -- -- 128 a v sd drain-source diode forward voltage v gs = 0 v, i s = 32 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 32 a, di f / dt = 100 a/ s -- 60 -- ns q rr reverse recovery charge -- 90 -- nc (note 4) (note 4) package marking and ordering information device marking device package reel size tape width quantity fqb30n06l FQB30N06LTM d2-pak 330mm 24mm 800
www.fairchildsemi.com 3 10 -1 0 10 1 10 0 10 1 10 2 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] 10 v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 30v v ds = 48v not e : i d = 32a v gs , gate-source voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 0 2 40 0 6 80100120 0 20 40 60 80 v gs = 10v v gs = 5v not e : t j = 25 r ds(on) [m ], drain-source on-resistance i d , drain current [a] 02 8 6 4 1 0 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] typical characteristics v ds , drain-source voltage [v] figure 5. capacitance characteristics q g , total gate charge [nc] figure 6. gate charge characteristics figure 3. on-resistance variation vs. dr ain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics fqb30n06l n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqb30n06l rev. c 1
www.fairchildsemi.com 4 z ? jc (t), thermal response [ o c/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 1.90 /w m a x. 2 . d u t y fa c t o r , d = t 1 /t 2 p 3 . t jm - t c = dm z* c j (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 25 50 75 100 125 150 175 0 10 20 30 40 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) not es : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 16 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , s q u a re w a v e p u ls e d u ra tio n [s e c ] figure 11. transient thermal response curve t 1 p dm t 2 fqb30n06l n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqb30n06l rev. c 1
www.fairchildsemi.com 5 figure 12. gate charge test circ uit & waveform figure 13. resistive switching test circuit & waveforms figure 14. unclamped inductive sw itching te st circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const. fqb30n06l n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqb30n06l rev. c 1
www.fairchildsemi.com 6 fi gure 15. peak diode recovery dv /dt test circuit & w aveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqb30n06l n-channel qfet ? mosfet ? 2000 fairchild semiconductor corporation fqb30n06l rev. c1
mechanical dimensions dimension in millimeters to-263 2l (d 2 pak) figure 16. 2ld,to263, surfac e mount package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt263-002 fqb30n06l n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqb30n06l rev. c1 www.fairchildsemi.com 7
?2000 fairchild semiconductor corporation fqb30n06l rev. c1 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ? fqb30n06l n-channel qfet ? mosfet
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